Primary breakdown in power transistor datasheets

transistor SMD 12W datasheet, ... to 800VDC a transistor with 1200V to 1500V breakdown capability is ... 3 w RF POWER TRANSISTOR NPN 5.8 ghz PH1214-55EL 12w 66 12w 66 ...

that secondary breakdown is a characteristic behavior of the transistor structure. Furthermore, in every transistor examined, secondary breakdown occurred not only for reverse GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case intended for a wide variety of small-signall and medium power applications in military and industrial equipments.

The bipolar power transistor is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity. IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT ), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. SOA is usually presented in transistor datasheets as a graph with V CE... General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage PN2222 PN2222A VCEO 30 40 Vdc Collector-Base Voltage PN2222 PN2222A VCBO 60 75 Vdc Emitter-Base Voltage PN2222 PN2222A VEBO 5.0 6.0 Vdc Collector Current – Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C ...