Tc4w53f datasheets

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tc4w53f/fu 3 2007-11-01 電気的特性 ta = −40°c ta = 25°c ta = 85°c 項目 記号 測定条件 v ss (v) vee (v) vdd (v) 最小 最大 最小 標準 最大 最小 最大 単位 5 3.5⎯ 3.5 2.75 ⎯ 3.5 ⎯ “h” レベル vih is = vdd 10 7.0⎯ 7.0 5.50 ⎯ v 7.0 ⎯ 15 11.0⎯ 11.0 8.25 ⎯ 11.0 ⎯ 5 ⎯ 1.5 ⎯ 2.25 1.5 ⎯ 1.5 • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • Reduction in critical Eoff parameter due to minimal minority-carrier recombination coupled with low on- PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Additional information For further information on technologies, our products, the TC4W53F Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for TC4W53F. 2N7002 Document number: DS11303 Rev. 37 - 2 © Diodes Incorporated 2 of 5 www.diodes.com October 2019 2N7002 Maximum Ratings (@T A = +25°C, unless otherwise ...