2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C ... NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.
2N3904 SMALL SIGNAL TRANSISTORS (NPN) FEATURES ¤ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¤ As complementary type, the PNP transistor 2N3906 is recommended. ¤ On special request, this transistor is also manufactured in the pin configuration TO-18. ¤ This transistor is also available in the SOT-23 case
NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * 2n3904 [Old version datasheet] Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO [Old version datasheet] High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS