E50c datasheet 2n3904

2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements.

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N5088 2N5089 VCEO 30 25 Vdc Collector − Base Voltage 2N5088 2N5089 VCBO 35 30 Vdc Emitter − Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 50 mAdc Total Device ...

Order today, ships today. 2N3904-AP – Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 600mW Through Hole TO-92 from Micro Commercial Co. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. All the part names for which the file 0hg86xgowaw325e79l26kuutc2cy.pdf is a datasheet