Bf158 datasheet 2n3904

2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.

NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

AN-134 transistor c2060 IN939 1N4465 Germanium itt 3N58 C1906 transistor Transistor Shortform Datasheet & Cross References 2n3986 equivalent transistor C943 transistor MSS1000 diode SEM 5027A Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 LN4005 diode reverse current and voltage 2n328 C844P MC707G mc708g A transistor which is related with ... 2N3563 datasheet, cross reference ... 2N3563 2N3904 2N3906 2N4032 2N4036 2N4037 2N4123 2N4124 2N4125 2N4128 2N5086 2N5087 2N5415 ... BF152 CS9018 BF158 bsy28 diode ... 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C Since the 2N3904 is an NPN transistor, that means the base needs positive biasing (appropriate voltage levels and resistance) to turn on the collector emitter junction for proper current flow. Use of a load resistor (R1 above) is also important so there is not too much current being driven through the LED and transistor. 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1)