Vn3205n8 datasheet

VN3205N8 Datasheet (PDF) 4.1. vn3205.pdf Size:687K _update_mosfet Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertex’s well-proven Ease of paralleling silicon-gate manufacturing process

Request Supertex HV9910: Universal High Brightness LED Driver online from Elcodis, view and download HV9910 pdf datasheet, Power Drivers specifications. Increase the current or voltage in your circuit with this VN3205N8-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode.

Maxim Integrated MXL211-AF-R is available at WIN SOURCE. Please review product page below for detailed information, including MXL211-AF-R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. VP0104N5 Enhancement Mode MOSFET (includes Low Threshold MOSFET) BVDSS / BVDGS -60V -90V RDS(ON) (max) 8.0 ID(ON) (min) -0.5A Order Number / Package VP0106N3 VP0109N3 Die VP0109ND. VN3205N8-G from Microchip Technology Inc. at Allied Electronics & Automation 50V 0.3Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Ordering Information N-Channel Enhancement-Mode Vertical DMOS FETs Product marking for TO-243AA: VN2L Where = 2-week alpha date code VN3205N3 Datasheet (PDF) 4.1. vn3205.pdf Size:687K _update_mosfet Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertex’s well-proven Ease of paralleling silicon-gate manufacturing process VN3205N6 datasheet, VN3205N6 pdf, VN3205N6 data sheet, datasheet, data sheet, pdf, Supertex Inc, N-Channel Enhancement-Mode Vertical DMOS FETs

ITS 4140N Datasheet Page 2 Rev. 2.1, 2006-07-24 Block Diagram + Vbb GND Control Circuit R Temperature Sensor 1 3 OUT IN RL IN 2/4 Pin Symbol Function 1 IN Input, activates the power switch in case of connection to GND Price & Stock FAIRCHILD FZT696B @@@@@ SOT-223 pricing and available inventory. Compare and choose the one you need from the below chart and then "add to cart" to proceed to check out. The Supertex VN2106 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient