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AON6978 Datasheet (PDF) 1.1. aon6978.pdf Size:476K _aosemi AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V • Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A • Low Gate Charge RDS(ON) (at VGS=10V) 5.7mΩ 3.8mΩ • High Current ...
MDU1512 – Single N-Channel Trench MOSFET 30V Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On -Resistance Variation with Drain Current and Gate Voltage Fig.3 On -Resistance Variation with Temperature Fig.4 On -Resistance Variation with Gate to Source Voltage Fig.6 Body Diode Forward Voltage Overview Microsemi's integrated RF modules are based on advanced semiconductor (SiC, SiGe, GaAs, GaN, InP) and packaging technologies. Microsemi’s multi-function modules are made in Santa Clara, California and Lowell, Massachusetts for design, manufacture, assembly and test of RF, microwave and millimeter wave subassemblies up to 140 GHz. The
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