Data Sheet PN10064EJ03V0DS 5 PS710B-1A,PS710BL-1A ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) IF 50 mA Reverse Voltage VR 5.0 V Power Dissipation PD 50 mW Peak Forward Current *1 IFP 1 A MOS FET Load Voltage VL 60 V Continuous Connection A IL 2.5 A Load Current *2
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Document ID Release date Data sheet status Change notice Supersedes 2N7002 v.7 20110908 Product data sheet - 2N7002 v.6 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.Looking for a datasheet of a E421 J-FET. Searched high and low on the internet for this, can't find anything. Seems to be a very exclusive component. Found datasheet of U421, but specs seems an unlikely match. Footnote: E321 is an obsolete matched N-Channel FET-pair, used as front-end differential amplifier in a Heathkit IO-4235 oscilloscope.manufactured as enhancement-type or depletion-type MOSFETs. Another type of FET is the Junction Field-E ect Transistors (JFET) which is not based on metal-oxide fabrication technique. FETs in each of these three categories can be fabricated either as a n-channel device or a p-channel device. As transistors in these 6 FET categories behave in a very
This maximum value (g mo) is specified in a JFET data sheet. The transconductance at any other value of gate to source voltage (g m) can be determined as follows. The expression of drain current (I D) isLinear RF Power FET 30W, to 175MHz, 50V Rev. V1 MRF148A 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.