I'm aiming for 100k, but looking at the datasheet for the 2N7000 MOSFET, I don't see it's electrical characteristics expressed like this at all. Have I misunderstood it by thinking in these terms, or is it possible to convert from the figures in the datasheet to an equivalent resistance at maximum gate voltage, like the rating on a potentiometer?
Text: period SGxxx1xx pot 10k V V A rms A V mA mA Hz V/µs A/µs A2s SGxxx1xx pot 100k de , 230V 50Hz SG544120 + - Potentiometer from 10K to 100K 40A FULL WAVE PULSE , / pot V Ic 0,04 @10V 4-20 @7V 0,005 @5V mA Rc 250 0,35 1000 K 10-100 K Paramètre , + 10K to 100K Photocouple Analog input P Synchro.
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