F530ns datasheet 7404

IRL530NS/L Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) †– ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 9.0A, VGS = 0V —

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible

IRF530N MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF530N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 79 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 10 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 17... EM4095 Copyright 2013, 1EM Microelectronic-Marin SA 4095-DS.doc, Version 4.2, 22-Apr-13 www.emmicroelectronic.com Read/Write analog front end for 125 kHz RFID Basestation

High-reliability discrete products and engineering services since 1977 MFE120-MFE122 DUAL GATE MOSFETS Rev.20130118 FEATURES Available as “HR” (h igh reliability) screened per MIL-PRF-19500, JANTX level. new datasheet according to pcn dsg/ct/1c02 marking: irf530 @. irf530 n-channel 100v - 0.115 Ω - 14a to-220 low gate charge stripfet™ ii power mosfet typical r ds(on) = 0.115Ω avalanche rugged technology 100% avalanche tested low gate charge high current capability 175 oc operating temperature description